NTF3055L108, NVF3055L108
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
V (BR)DSS
I DSS
60
?
?
?
68
68
?
?
?
?
1.0
10
Vdc
mV/ ° C
m Adc
Gate ? Body Leakage Current
(V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 1.5 Adc)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 3.0 Adc)
(V GS = 5.0 Vdc, I D = 1.5 Adc, T J = 150 ° C)
V GS(th)
R DS(on)
V DS(on)
1.0
?
?
?
1.68
4.6
92
0.290
0.250
2.0
?
120
0.43
?
Vdc
mV/ ° C
m W
Vdc
Forward Transconductance (Note 3)
(V DS = 7.0 Vdc, I D = 3.0 Adc)
g fs
?
5.7
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
313
112
40
440
160
60
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
11
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 3.0 Adc,
V GS = 5.0 Vdc,
R G = 9.1 W ) (Note 3)
t r
t d(off)
t f
?
?
?
35
22
27
70
45
60
Gate Charge
(V DS = 48 Vdc, I D = 3.0 Adc,
V GS = 5.0 Vdc) (Note 3)
Q T
Q 1
Q 2
?
?
?
7.6
1.4
4.0
15
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 3.0 Adc, V GS = 0 Vdc)
(I S = 3.0 Adc, V GS = 0 Vdc,
T J = 150 ° C) (Note 3)
(I S = 3.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.87
0.72
35
21
14
0.044
1.0
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料
NTF3055L175T1 MOSFET N-CH 60V 2A SOT223
NTF5P03T3G MOSFET P-CH 30V 3.7A SOT223
NTF6P02T3G MOSFET PWR P-CHAN 10A 20V SOT223
NTGD3133PT1G MOSFET P-CH DUAL 20V 21.5A 6TSOP
NTGD3147FT1G MOSFET P-CH 20V 2.2A 6-TSOP
NTGD3148NT1G MOSFET N-CH DUAL 20V 3.5A 6TSOP
NTGD3149CT1G MOSFET COMPL 20V DUAL 6-TSOP
NTGD4161PT1G MOSFET P-CH DUAL 30V 2.3A 6-TSOP
相关代理商/技术参数
NTF3055L175 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level
NTF3055L175T1 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T1G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3G 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF3055L175T3LF 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTF3055L175T3LFG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level
NTF3226E 制造商:SRNTEL 功能描述: